IRF3205STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Mounting Type :

Surface Mount

Power Dissipation-Max :

200W Tc

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

146nC @ 10V

Factory Lead Time :

14 Weeks

Series :

HEXFET®

Terminal Form :

Gull wing

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

3247pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.008Ohm

Terminal Position :

Single

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Application :

SWITCHING

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

75A

Pulsed Drain Current-Max (IDM) :

390A

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

8m Ω @ 62A, 10V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

264 mJ

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

JEDEC-95 Code :

TO-252