IPB65R660CFDAATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

9 ns

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

62.5W

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Continuous Drain Current (ID) :

6A

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

543pF @ 100V

Number of Pins :

3

Terminal Position :

Single

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Case Connection :

DRAIN

Mount :

Surface Mount

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

660m Ω @ 3.2A, 10V

Max Dual Supply Voltage :

650V

Rise Time :

8ns

FET Type :

N-Channel

Operating Temperature :

-40°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Fall Time (Typ) :

10 ns

Turn-Off Delay Time :

40 ns

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6A

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Drain-source On Resistance-Max :

0.66Ohm

JEDEC-95 Code :

TO-252AA

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation-Max :

62.5W Tc

Series :

Automotive, AEC-Q101, CoolMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Gate to Source Voltage (Vgs) :

20V

Published :

2008