IPB60R099C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

278W Tc

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Pbfree Code :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Published :

2008

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

37.9A

Vgs(th) (Max) @ Id :

3.5V @ 1.21mA

Gate Charge (Qg) (Max) @ Vgs :

119nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

796 mJ

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Terminal Position :

Single

Series :

CoolMOS™

Drain-source On Resistance-Max :

0.099Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

37.9A Tc

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

112A

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

2660pF @ 100V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

99m Ω @ 18.1A, 10V

Number of Terminations :

2