IPB60R099C7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.099Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Rds On (Max) @ Id, Vgs :

99m Ω @ 9.7A, 10V

Terminal Form :

Gull wing

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 490μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

22A

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-263AB

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

97 mJ

Factory Lead Time :

18 Weeks

Published :

2011

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

650V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Power Dissipation-Max :

110W Tc

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Pulsed Drain Current-Max (IDM) :

83A

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1819pF @ 400V

Series :

CoolMOS™ C7