IPB60R055CFD7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

180 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

38A

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

153A

Case Connection :

DRAIN

Series :

CoolMOS™ CFD7

Current - Continuous Drain (Id) @ 25°C :

38A Tc

FET Type :

N-Channel

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 900μA

Mounting Type :

Surface Mount

Number of Terminations :

2

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.055Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3194pF @ 400V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

650V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Power Dissipation-Max :

178W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

DS Breakdown Voltage-Min :

600V

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

55m Ω @ 18A, 10V