IPB60R055CFD7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

38A

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Vgs (Max) :

±20V

Surface Mount :

yes

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

180 mJ

Number of Terminations :

2

Drain-source On Resistance-Max :

0.055Ohm

Rds On (Max) @ Id, Vgs :

55m Ω @ 18A, 10V

Reach Compliance Code :

Compliant

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Vgs(th) (Max) @ Id :

4.5V @ 900μA

Power Dissipation-Max :

178W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3194pF @ 400V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

153A

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

CoolMOS™ CFD7

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

RoHS Compliant

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON