IPB600N25N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Continuous Drain Current (ID) :

25A

ECCN Code :

EAR99

Power Dissipation-Max :

136W Tc

Vgs(th) (Max) @ Id :

4V @ 90µA

FET Type :

N-Channel

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Published :

2008

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Halogen Free :

Halogen Free

Series :

OptiMOS™

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Mount :

Surface Mount

Lead Free :

Contains Lead

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

Pbfree Code :

No

Power Dissipation :

136W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

13 Weeks

Turn On Delay Time :

10 ns

Max Dual Supply Voltage :

250V

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Terminal Finish :

Tin (Sn)

Number of Pins :

3

JESD-609 Code :

e3

Vgs (Max) :

±20V

Terminal Position :

Single

Fall Time (Typ) :

8 ns

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Pin Count :

4

Turn-Off Delay Time :

22 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.06Ohm

Terminal Form :

Gull wing

Number of Elements :

1