IPB600N25N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Halogen Free :

Halogen Free

Terminal Form :

Gull wing

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 90µA

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Pbfree Code :

No

Number of Pins :

3

Case Connection :

DRAIN

Factory Lead Time :

13 Weeks

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Max Dual Supply Voltage :

250V

Configuration :

SINGLE WITH BUILT-IN DIODE

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Turn-Off Delay Time :

22 ns

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

25A

FET Type :

N-Channel

Transistor Application :

SWITCHING

Series :

OptiMOS™

ECCN Code :

EAR99

Power Dissipation :

136W

Published :

2008

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

10 ns

Fall Time (Typ) :

8 ns

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.06Ohm

Power Dissipation-Max :

136W Tc

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1