IPB60R099P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Published :

2014

DS Breakdown Voltage-Min :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1952pF @ 400V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

99m Ω @ 10.5A, 10V

Number of Terminations :

2

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 530μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.099Ohm

Drain to Source Voltage (Vdss) :

650V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

105 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Series :

CoolMOS™ P7

Power Dissipation-Max :

117W Tc

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

100A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Terminal Position :

Single

Reach Compliance Code :

not_compliant