IPB60R080P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

118 mJ

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

600V

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Number of Elements :

1

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

110A

Input Capacitance (Ciss) (Max) @ Vds :

2180pF @ 400V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Terminal Position :

Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

650V

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.08Ohm

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 590μA

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

80m Ω @ 11.8A, 10V

Series :

CoolMOS™ P7

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

129W Tc