IPB60R099CPATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

31A

JESD-609 Code :

e3

Number of Terminations :

2

Published :

2006

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs (Max) :

±20V

Terminal Position :

Single

Pbfree Code :

No

Drain-source On Resistance-Max :

0.099Ohm

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Pin Count :

4

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Transistor Application :

SWITCHING

Power Dissipation-Max :

255W Tc

Avalanche Energy Rating (Eas) :

800 mJ

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

99m Ω @ 18A, 10V

Vgs(th) (Max) @ Id :

3.5V @ 1.2mA

Pulsed Drain Current-Max (IDM) :

93A