IPB60R060P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.06Ohm

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

60m Ω @ 15.9A, 10V

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

600V

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

650V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Height :

4.7mm

Terminal Form :

Gull wing

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Series :

CoolMOS™ P7

Turn-Off Delay Time :

79 ns

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

4V @ 800μA

Published :

2014

Case Connection :

DRAIN

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Turn On Delay Time :

23 ns

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

48A

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

164W

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

164W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2895pF @ 400V

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED