IPB60R060P7ATMA1

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Mfr.Part #
IPB60R060P7ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 650V 48A D2PAK
Stock
39,675
In Stock :
39,675

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.06Ohm
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
60m Ω @ 15.9A, 10V
Number of Channels :
1
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
600V
Factory Lead Time :
18 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain to Source Voltage (Vdss) :
650V
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Height :
4.7mm
Terminal Form :
Gull wing
Vgs (Max) :
±20V
JESD-30 Code :
R-PSSO-G2
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Series :
CoolMOS™ P7
Turn-Off Delay Time :
79 ns
Mounting Type :
Surface Mount
Max Junction Temperature (Tj) :
150°C
Vgs(th) (Max) @ Id :
4V @ 800μA
Published :
2014
Case Connection :
DRAIN
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Turn On Delay Time :
23 ns
Reach Compliance Code :
not_compliant
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Continuous Drain Current (ID) :
48A
Number of Terminations :
2
Operating Temperature :
-55°C~150°C TJ
Power Dissipation :
164W
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
48A Tc
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
67nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
164W Tc
Input Capacitance (Ciss) (Max) @ Vds :
2895pF @ 400V
Surface Mount :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R060P7ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, IPB60R060P7ATMA1 pinout, IPB60R060P7ATMA1 datasheet PDF, IPB60R060P7ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R060P7ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB60R060P7ATMA1


N-Channel Tape & Reel (TR) 60m Ω @ 15.9A, 10V ±20V 2895pF @ 400V 67nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB60R060P7ATMA1 Description


The CoolMOSTM 7th generation platform is a ground-breaking high-voltage power MOSFET technology developed by Infineon Technologies and based on the superjunction (SJ) principle. The CoolMOSTM P7 series, which operates at 600V, is the successor to the CoolMOSTM P6 series. It combines the advantages of a rapid switching SJ MOSFET with exceptional ease of use, such as reduced ringing, superior body diode resilience against harsh commutation, and excellent ESD capability. Switching applications are also more efficient, smaller, and cooler due to exceptionally reduced switching and conduction losses.



IPB60R060P7ATMA1 Features


?Exceptional commutation robustness makes it suitable for hard and soft switching (PFC and LLC).


?Extremely low switching and conduction losses


?All items have excellent ESD robustness of >2kV (HBM).


?Better Ros(on>/package items than competitors, thanks to a low Ros(onfA) (below 10hmemm2)


?Fully approved for industrial applications according to JEDEC standards



IPB60R060P7ATMA1 Applications


  • PCSilverbox,

  • Adapter

  • LCD&PDPTV

  • Lighting

  • Server

  • Telecom

  • UPS


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