IPB60R060P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Drain to Source Breakdown Voltage :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Vgs (Max) :

±20V

Turn On Delay Time :

23 ns

Rds On (Max) @ Id, Vgs :

60m Ω @ 15.9A, 10V

Transistor Application :

SWITCHING

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

2895pF @ 400V

Terminal Position :

Single

Surface Mount :

yes

Height :

4.7mm

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

JESD-609 Code :

e3

Power Dissipation-Max :

164W Tc

Turn-Off Delay Time :

79 ns

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

48A

Drain to Source Voltage (Vdss) :

650V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 800μA

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Power Dissipation :

164W

Published :

2014

Series :

CoolMOS™ P7

Drain-source On Resistance-Max :

0.06Ohm

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Type :

N-Channel