IPB60R060P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Power Dissipation :

164W

RoHS Status :

ROHS3 Compliant

Height :

4.7mm

Rds On (Max) @ Id, Vgs :

60m Ω @ 15.9A, 10V

Drain-source On Resistance-Max :

0.06Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 800μA

Input Capacitance (Ciss) (Max) @ Vds :

2895pF @ 400V

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

23 ns

ECCN Code :

EAR99

Number of Terminations :

2

Turn-Off Delay Time :

79 ns

Packaging :

Tape and Reel (TR)

Series :

CoolMOS™ P7

Drain to Source Breakdown Voltage :

600V

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

650V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

48A

Number of Elements :

1

Power Dissipation-Max :

164W Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Published :

2014

Number of Channels :

1