IPB60R060C7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

35A

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 400V

Power Dissipation-Max :

162W Tc

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

600V

Series :

CoolMOS™ C7

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

FET Type :

N-Channel

Published :

2014

JEDEC-95 Code :

TO-263AB

Number of Elements :

1

Drain-source On Resistance-Max :

0.06Ohm

Avalanche Energy Rating (Eas) :

159 mJ

Drain to Source Voltage (Vdss) :

650V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 800μA

Pulsed Drain Current-Max (IDM) :

135A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Number of Terminations :

2

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

60m Ω @ 15.9A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)