IPB65R600C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

18A

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

650V

FET Type :

N-Channel

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

RoHS Status :

RoHS Compliant

Surface Mount :

yes

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Published :

2008

Power Dissipation-Max :

63W Tc

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

650V

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

142 mJ

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.6Ohm

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V