IPB65R600C6
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- Mfr.Part #
- IPB65R600C6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 47,565
- In Stock ：
- 47,565
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Power Dissipation (Max) :
- 63W (Tc)
- Product Status :
- Active
- Gate Charge (Qg) (Max) @ Vgs :
- 23 nC @ 10 V
- Package :
- Bulk
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A (Tc)
- Supplier Device Package :
- PG-TO263-3-2
- Vgs (Max) :
- ±20V
- FET Feature :
- -
- Drain to Source Voltage (Vdss) :
- 650 V
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 440 pF @ 100 V
- Technology :
- MOSFET (Metal Oxide)
- Series :
- CoolMOS™
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3.5V @ 210µA
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 2.1A, 10V
- Datasheets
- IPB65R600C6
MOSFET (Metal Oxide) N-Channel 600mOhm @ 2.1A, 10V ±20V 440 pF @ 100 V 23 nC @ 10 V 650 V TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB65R600C6 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 440 pF @ 100 V.This transistor requires a drain-source voltage (Vdss) of 650 V.
IPB65R600C6 Features
a 650 V drain to source voltage (Vdss)
IPB65R600C6 Applications
There are a lot of Infineon
IPB65R600C6 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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