IPB65R310CFDATMA1
- Mfr.Part #
- IPB65R310CFDATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11.4A D2PAK
- Stock
- 9,751
- In Stock :
- 9,751
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- No
- Halogen Free :
- Halogen Free
- Rise Time :
- 7.5ns
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2008
- Vgs(th) (Max) @ Id :
- 4.5V @ 400μA
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Contains Lead
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 100V
- Continuous Drain Current (ID) :
- 11.4A
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Turn-Off Delay Time :
- 45 ns
- Power Dissipation-Max :
- 104.2W Tc
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 7 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Turn On Delay Time :
- 11 ns
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- CoolMOS™
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Factory Lead Time :
- 18 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 4.4A, 10V
- Terminal Form :
- Gull wing
- Max Dual Supply Voltage :
- 650V
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Single
- Pin Count :
- 4
- Datasheets
- IPB65R310CFDATMA1

N-Channel Tape & Reel (TR) 310m Ω @ 4.4A, 10V ±20V 1100pF @ 100V 41nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB65R310CFDATMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 290 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1100pF @ 100V.This device has a continuous drain current (ID) of [11.4A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 650V.Its overall power consumption can be reduced by using drive voltage (10V).
IPB65R310CFDATMA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11.4A
the turn-off delay time is 45 ns
IPB65R310CFDATMA1 Applications
There are a lot of Infineon Technologies
IPB65R310CFDATMA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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