IPB65R310CFDAATMA1
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- Mfr.Part #
- IPB65R310CFDAATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11.4A D2PAK
- Stock
- 1,407
- In Stock ：
- 1,407
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Single
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 11.4A
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 18 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 104.2W Tc
- Fall Time (Typ) :
- 7 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- High Reliability
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 45 ns
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Halogen Free :
- Halogen Free
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Rise Time :
- 7.5ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 100V
- Pbfree Code :
- No
- Max Dual Supply Voltage :
- 650V
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 4.4A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4.5V @ 440μA
- Published :
- 2008
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 2
- Turn On Delay Time :
- 11 ns
- Number of Pins :
- 3
- Lead Free :
- Contains Lead
- Operating Temperature :
- -40°C~150°C TJ
- Datasheets
- IPB65R310CFDAATMA1
N-Channel Tape & Reel (TR) 310m Ω @ 4.4A, 10V ±20V 1110pF @ 100V 41nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB65R310CFDAATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 290 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1110pF @ 100V.This device conducts a continuous drain current (ID) of 11.4A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPB65R310CFDAATMA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11.4A
the turn-off delay time is 45 ns
IPB65R310CFDAATMA1 Applications
There are a lot of Infineon Technologies
IPB65R310CFDAATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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