IPB65R280E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Published :

2008

Drain-source On Resistance-Max :

0.28Ohm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Max Dual Supply Voltage :

650V

Series :

CoolMOS™ E6

Vgs (Max) :

±20V

Number of Elements :

1

Turn On Delay Time :

11 ns

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

650V

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Lead Free :

Contains Lead

Number of Channels :

1

Transistor Element Material :

SILICON

Element Configuration :

Single

Turn-Off Delay Time :

76 ns

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.4A, 10V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Avalanche Energy Rating (Eas) :

290 mJ

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

1.946308g

Power Dissipation-Max :

104W Tc

Rise Time :

9ns

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

9 ns

Pbfree Code :

No

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Continuous Drain Current (ID) :

13.8A

Vgs(th) (Max) @ Id :

3.5V @ 440µA