IPB65R280E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tape and Reel (TR)

Published :

2008

Drain-source On Resistance-Max :

0.28Ohm

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Mount :

Surface Mount

Power Dissipation-Max :

104W Tc

Weight :

1.946308g

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

650V

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Number of Elements :

1

Turn-Off Delay Time :

76 ns

Avalanche Energy Rating (Eas) :

290 mJ

Continuous Drain Current (ID) :

13.8A

Drain to Source Breakdown Voltage :

650V

Element Configuration :

Single

Turn On Delay Time :

11 ns

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

9 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Number of Channels :

1

Number of Terminations :

2

Pin Count :

4

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.4A, 10V

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

CoolMOS™ E6

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Rise Time :

9ns

Pbfree Code :

No

Factory Lead Time :

12 Weeks