IPB65R280C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.28Ohm

Max Dual Supply Voltage :

650V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Turn On Delay Time :

13 ns

Terminal Position :

Single

Rise Time :

11ns

Factory Lead Time :

12 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

105 ns

Vgs(th) (Max) @ Id :

3.5V @ 440µA

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

104W Tc

Series :

CoolMOS™

Case Connection :

DRAIN

Published :

2008

ECCN Code :

EAR99

Continuous Drain Current (ID) :

13.8A

Fall Time (Typ) :

12 ns

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.4A, 10V

Avalanche Energy Rating (Eas) :

290 mJ

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Power Dissipation :

104W

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Pulsed Drain Current-Max (IDM) :

39A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Mount :

Surface Mount

Halogen Free :

Halogen Free

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No