IPB65R190CFDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

151W Tc

Published :

2008

Qualification Status :

Not Qualified

Pin Count :

4

Series :

CoolMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

17.5A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

DS Breakdown Voltage-Min :

650V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

484 mJ

Terminal Position :

Single

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

190m Ω @ 7.3A, 10V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

57.2A

Pbfree Code :

No

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

650V

Vgs(th) (Max) @ Id :

4.5V @ 730μA

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 100V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

17.5A

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.19Ohm

JESD-609 Code :

e3