IPB65R190CFDAATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.5V @ 700μA

Power Dissipation-Max :

151W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 100V

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

650V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Number of Pins :

3

Operating Temperature :

-40°C~150°C TJ

Max Dual Supply Voltage :

650V

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

17.5A Tc

Rds On Max :

190 mΩ

Factory Lead Time :

18 Weeks

Input Capacitance :

1.85nF

Min Operating Temperature :

-40°C

Packaging :

Tape and Reel (TR)

Published :

2012

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.3A, 10V

Supplier Device Package :

D2PAK (TO-263AB)

Halogen Free :

Halogen Free

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Vgs (Max) :

±20V

Series :

Automotive, AEC-Q101, CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

17.5A