IPB65R190CFD7AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

77W (Tc)

Vgs(th) (Max) @ Id :

4.5V @ 320µA

Product Type :

MOSFET

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 10 V

Qualification :

AEC-Q101

Subcategory :

MOSFETs

RoHS :

Details

FET Type :

N-Channel

Channel Mode :

Enhancement

Brand :

Infineon Technologies

Supplier Device Package :

PG-TO263-3

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

14A (Tc)

FET Feature :

-

Power Dissipation :

77

Product Status :

Active

Manufacturer :

Infineon

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id :

14

Channel Type :

N Channel

Mounting Style :

SMD/SMT

Packaging :

Cut Tape

Minimum Operating Temperature :

- 55 C

Transistor Polarity :

N-Channel

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-40°C ~ 150°C (TJ)

Product :

MOSFET

Product Category :

MOSFET

Tradename :

CoolMOS

Drain to Source Voltage (Vdss) :

650 V

Package :

Digi-Reel?

Input Capacitance (Ciss) (Max) @ Vds :

1291 pF @ 400 V

Base Product Number :

IPB65R190

Number of Channels :

1 Channel

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

190mOhm @ 6.4A, 10V

Series :

Automotive, AEC-Q101, CoolMOS?