IPB65R190C7ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

72W Tc

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

190m Ω @ 5.7A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

57 mJ

Drain to Source Voltage (Vdss) :

650V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.19Ohm

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Series :

CoolMOS™ C7

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Pulsed Drain Current-Max (IDM) :

49A

DS Breakdown Voltage-Min :

650V

Vgs(th) (Max) @ Id :

4V @ 290μA

Case Connection :

DRAIN

Number of Terminations :

2

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

13A

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 400V

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Factory Lead Time :

18 Weeks