IPB65R190C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

190m Ω @ 7.3A, 10V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.19Ohm

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.5V @ 730µA

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 100V

Pulsed Drain Current-Max (IDM) :

66A

Pbfree Code :

No

FET Type :

N-Channel

JESD-609 Code :

e3

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Published :

2004

Drain to Source Voltage (Vdss) :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

151W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

485 mJ

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

650V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Mounting Type :

Surface Mount