IPB65R150CFDAATMA1
- Mfr.Part #
- IPB65R150CFDAATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22.4A D2PAK
- Stock
- 31,282
- In Stock :
- 31,282
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.15Ohm
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 4
- JESD-30 Code :
- R-PSSO-G2
- Continuous Drain Current (ID) :
- 22.4A
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Finish :
- Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 72A
- Power Dissipation-Max :
- 195.3W Tc
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2340pF @ 100V
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 614 mJ
- Additional Feature :
- High Reliability
- Halogen Free :
- Halogen Free
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Max Dual Supply Voltage :
- 650V
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 9.3A, 10V
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 22.4A Tc
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Pbfree Code :
- No
- Lead Free :
- Contains Lead
- Number of Terminations :
- 2
- Factory Lead Time :
- 18 Weeks
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4.5V @ 900μA
- Datasheets
- IPB65R150CFDAATMA1

N-Channel Tape & Reel (TR) 150m Ω @ 9.3A, 10V ±20V 2340pF @ 100V 86nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB65R150CFDAATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 614 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2340pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 72A, its maximum pulsed drain current.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPB65R150CFDAATMA1 Features
the avalanche energy rating (Eas) is 614 mJ
a continuous drain current (ID) of 22.4A
based on its rated peak drain current 72A.
IPB65R150CFDAATMA1 Applications
There are a lot of Infineon Technologies
IPB65R150CFDAATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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