IPB65R150CFDAATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

18 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2340pF @ 100V

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

650V

Additional Feature :

High Reliability

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

614 mJ

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4.5V @ 900μA

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Number of Pins :

3

Power Dissipation-Max :

195.3W Tc

Terminal Position :

Single

Operating Temperature :

-40°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

22.4A

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Published :

2008

Reach Compliance Code :

not_compliant

Drain-source On Resistance-Max :

0.15Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

72A

Number of Elements :

1

Transistor Element Material :

SILICON

Pin Count :

4

Pbfree Code :

No

Rds On (Max) @ Id, Vgs :

150m Ω @ 9.3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

22.4A Tc

Number of Terminations :

2

Halogen Free :

Halogen Free

Series :

Automotive, AEC-Q101, CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE