IPB65R125C7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Power Dissipation-Max :

101W Tc

Vgs(th) (Max) @ Id :

4V @ 440μA

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1670pF @ 400V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

650V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.125Ohm

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

75A

Rds On (Max) @ Id, Vgs :

125m Ω @ 8.9A, 10V

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

89 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Series :

CoolMOS™ C7

Surface Mount :

yes

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

650V

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

18A

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Factory Lead Time :

20 Weeks