IPB65R110CFDAATMA1
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- Mfr.Part #
- IPB65R110CFDAATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 31.2A D2PAK
- Stock
- 39,722
- In Stock ：
- 39,722
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 1.3mA
- Lead Free :
- Contains Lead
- Rise Time :
- 11ns
- Pulsed Drain Current-Max (IDM) :
- 99.6A
- Turn On Delay Time :
- 16 ns
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Pbfree Code :
- No
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 12.7A, 10V
- Max Dual Supply Voltage :
- 650V
- Turn-Off Delay Time :
- 68 ns
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 31.2A Tc
- Continuous Drain Current (ID) :
- 31.2A
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 3240pF @ 100V
- Avalanche Energy Rating (Eas) :
- 845 mJ
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -40°C~150°C TJ
- Factory Lead Time :
- 18 Weeks
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Halogen Free :
- Halogen Free
- Fall Time (Typ) :
- 6 ns
- Vgs (Max) :
- ±20V
- Additional Feature :
- High Reliability
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 277.8W Tc
- Terminal Position :
- Single
- Datasheets
- IPB65R110CFDAATMA1
N-Channel Tape & Reel (TR) 110m Ω @ 12.7A, 10V ±20V 3240pF @ 100V 118nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB65R110CFDAATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 845 mJ.A device's maximal input capacitance is 3240pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 31.2A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 68 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 99.6A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 650V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPB65R110CFDAATMA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 31.2A
the turn-off delay time is 68 ns
based on its rated peak drain current 99.6A.
IPB65R110CFDAATMA1 Applications
There are a lot of Infineon Technologies
IPB65R110CFDAATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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