IPB65R099C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

99m Ω @ 12.8A, 10V

Avalanche Energy Rating (Eas) :

845 mJ

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Series :

CoolMOS™

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Gate Charge (Qg) (Max) @ Vgs :

127nC @ 10V

Turn-Off Delay Time :

77 ns

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Pulsed Drain Current-Max (IDM) :

115A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Max Dual Supply Voltage :

650V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2780pF @ 100V

Rise Time :

9ns

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.099Ohm

FET Type :

N-Channel

Continuous Drain Current (ID) :

38A

Fall Time (Typ) :

6 ns

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

3.5V @ 1.2mA

Pin Count :

4

Pbfree Code :

No

Turn On Delay Time :

10.6 ns

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Power Dissipation-Max :

278W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Published :

2008

Halogen Free :

Halogen Free

Terminal Position :

Single