IPB65R045C7ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 400V

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drain-source On Resistance-Max :

0.045Ohm

Terminal Finish :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

46A

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Avalanche Energy Rating (Eas) :

249 mJ

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

650V

Factory Lead Time :

18 Weeks

Pulsed Drain Current-Max (IDM) :

212A

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Series :

CoolMOS™ C7

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 1.25mA

Vgs (Max) :

±20V

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

45m Ω @ 24.9A, 10V

Power Dissipation-Max :

227W Tc

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

650V