IPB65R045C7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

CoolMOS™ C7

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.045Ohm

Terminal Position :

Single

Factory Lead Time :

20 Weeks

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Power Dissipation :

227W

Avalanche Energy Rating (Eas) :

249 mJ

Continuous Drain Current (ID) :

46A

Number of Elements :

1

Lead Free :

Contains Lead

Pin Count :

4

Reach Compliance Code :

not_compliant

Turn On Delay Time :

20 ns

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Fall Time (Typ) :

7 ns

Vgs (Max) :

±20V

Additional Feature :

High Reliability

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

82 ns

Terminal Form :

Gull wing

Case Connection :

DRAIN

Rise Time :

14ns

Mount :

Surface Mount

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Dual Supply Voltage :

650V

Rds On (Max) @ Id, Vgs :

45m Ω @ 24.9A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

46A Tc

Power Dissipation-Max :

227W Tc

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 1.25mA

Operating Mode :

ENHANCEMENT MODE

Halogen Free :

Halogen Free

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V