IPB65R041CFD7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Product Category :

MOSFET

Mounting Type :

Surface Mount

FET Feature :

-

Vgs(th) (Max) @ Id :

4.5V @ 1.24mA

Vgs (Max) :

±20V

Product Type :

MOSFET

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Qualification :

-

Channel Mode :

Enhancement

Brand :

Infineon Technologies

Package Type :

D2PAK (TO-263)

Input Capacitance (Ciss) (Max) @ Vds :

4975 pF @ 400 V

Gate Charge (Qg) (Max) @ Vgs :

102 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

50A (Tc)

Minimum Operating Temperature :

- 55 C

Power Dissipation :

227

RoHS :

Details

Product Status :

Active

Supplier Device Package :

PG-TO263-3

Power Dissipation (Max) :

227W (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

41mOhm @ 24.8A, 10V

Number of Elements per Chip :

1

Channel Type :

N

Transistor Polarity :

N-Channel

Base Product Number :

IPB65R

Continuous Drain Current Id :

50

Subcategory :

MOSFETs

Manufacturer :

Infineon

Mounting Style :

SMD/SMT

Package :

Digi-Reel?

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Cut Tape

Series :

CoolMOS? CFD7

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 150 C

Pin Count :

3