IPB60R600P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.6Ohm

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Series :

CoolMOS™ P6

JESD-30 Code :

R-PSSO-G2

Halogen Free :

Halogen Free

Published :

2015

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

133 mJ

Terminal Position :

Single

Max Dual Supply Voltage :

600V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

557pF @ 100V

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

63W Tc

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

Pulsed Drain Current-Max (IDM) :

18A

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Elements :

1

Continuous Drain Current (ID) :

7.3A

Drive Voltage (Max Rds On,Min Rds On) :

10V