IPB60R600CPATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

60W

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Mount :

Surface Mount

Lead Free :

Contains Lead

Turn-Off Delay Time :

75 ns

Pbfree Code :

No

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

6.1A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

6.1A

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

600V

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

17 ns

Number of Elements :

1

Drain-source On Resistance-Max :

0.6Ohm

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.3A, 10V

Series :

CoolMOS™

JESD-609 Code :

e3

Fall Time (Typ) :

17 ns

Packaging :

Tape and Reel (TR)

Pin Count :

4

Power Dissipation-Max :

60W Tc

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 100V

Published :

2008

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

3.5V @ 220µA

Radiation Hardening :

No

Case Connection :

DRAIN

Rise Time :

12ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Terminal Form :

Gull wing

Vgs (Max) :

±20V