IPB60R600C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

600V

Pin Count :

4

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Power Dissipation-Max :

63W Tc

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Pbfree Code :

No

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

7.3A

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

19A

Avalanche Energy Rating (Eas) :

133 mJ

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

Drain-source On Resistance-Max :

0.6Ohm

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Drain to Source Voltage (Vdss) :

600V

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN