IPB60R520CPATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

520m Ω @ 3.8A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™

Published :

2008

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

66W Tc

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

166 mJ

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

17A

Pin Count :

4

Pbfree Code :

No

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

6.8A

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Drain-source On Resistance-Max :

0.52Ohm

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V