IPB60R520CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Max Power Dissipation :

95 W

Configuration :

Single

Vgs (Max) :

±20V

Turn-Off Delay Time :

74 ns

Channel Mode :

Enhancement

Turn-On Delay Time :

17 ns

Drain to Source Breakdown Voltage :

600 V

Product Status :

Active

Threshold Voltage :

3 V

Packaging :

Digi-Reel®

Min Operating Temperature :

-55 °C

Continuous Drain Current Id :

6.8

Input Capacitance :

1.12 nF

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rds On Max :

200 mΩ

FET Type :

N-Channel

Supplier Device Package :

PG-TO263-3-2

Termination :

SMD/SMT

FET Feature :

-

Package :

Bulk

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Rise Time :

12 ns

Channel Type :

N

Subcategory :

MOSFETs

Product Category :

MOSFET

Dual Supply Voltage :

650 V

Transistor Type :

1 N-Channel

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Technology :

Si

Brand :

Infineon Technologies

Gate to Source Voltage (Vgs) :

20 V

Halogen Free :

Halogen Free

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

520mOhm @ 3.8A, 10V

Mounting Style :

SMD/SMT

Length :

10 mm

Drain to Source Voltage (Vdss) :

200 V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

630 pF @ 100 V

REACH SVHC :

No SVHC

Width :

9.25 mm

Continuous Drain Current (ID) :

6.8 A

Package / Case :

TO-263-3

RoHS :

Compliant

Drain to Source Resistance :

520 mΩ

Current - Continuous Drain (Id) @ 25°C :

6.8A (Tc)

Height :

4.4 mm

Series :

CoolMOS CE

Product Type :

MOSFET

Max Operating Temperature :

150 °C

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

66 W

Power Dissipation (Max) :

66W (Tc)

Nominal Vgs :

3 V

Transistor Polarity :

N-Channel

Tradename :

CoolMOS

Minimum Operating Temperature :

- 55 C

Manufacturer :

Infineon