IPB60R380P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Lead Free :

Contains Lead

Terminal Position :

Single

JESD-609 Code :

e3

Power Dissipation-Max :

83W Tc

Published :

2008

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 320µA

Pulsed Drain Current-Max (IDM) :

29A

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

877pF @ 100V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.8A, 10V

Case Connection :

DRAIN

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Number of Elements :

1

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Drain-source On Resistance-Max :

0.38Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

600V

Avalanche Energy Rating (Eas) :

210 mJ

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Series :

CoolMOS™ P6

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Continuous Drain Current (ID) :

10.6A

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2