IPB60R380C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Power Dissipation-Max :

83W Tc

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.5V @ 320µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

110 ns

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

15 ns

Max Dual Supply Voltage :

600V

Series :

CoolMOS™

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

10.6A

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

30A

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

4

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Halogen Free :

Halogen Free

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.38Ohm

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.8A, 10V

Case Connection :

DRAIN

Rise Time :

10ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Voltage

Fall Time (Typ) :

9 ns

Power Dissipation :

83W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)