IPB60R360P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

27 mJ

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

600V

Pulsed Drain Current-Max (IDM) :

26A

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

360m Ω @ 2.7A, 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

41W Tc

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Drain-source On Resistance-Max :

0.36ohm

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 400V

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Series :

CoolMOS™ P7

Vgs(th) (Max) @ Id :

4V @ 140μA

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

600V

Published :

2014

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V