IPB60R330P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 100V

Factory Lead Time :

12 Weeks

Halogen Free :

Halogen Free

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

247 mJ

Transistor Application :

SWITCHING

Published :

2008

Vgs(th) (Max) @ Id :

4.5V @ 370μA

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Lead Free :

Contains Lead

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Series :

CoolMOS™ P6

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Dual Supply Voltage :

600V

Drain-source On Resistance-Max :

0.33Ohm

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Rds On (Max) @ Id, Vgs :

330m Ω @ 4.5A, 10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Number of Terminations :

2

JEDEC-95 Code :

TO-236AB

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Continuous Drain Current (ID) :

12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

33A

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Power Dissipation-Max :

93W Tc

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant