IPB60R330P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Lead Free :

Contains Lead

JESD-609 Code :

e3

Power Dissipation-Max :

93W Tc

Mount :

Surface Mount

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Number of Elements :

1

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

12A Tc

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

33A

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

247 mJ

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

JEDEC-95 Code :

TO-236AB

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Max Dual Supply Voltage :

600V

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 100V

Series :

CoolMOS™ P6

Transistor Element Material :

SILICON

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

12A

Drain-source On Resistance-Max :

0.33Ohm

Halogen Free :

Halogen Free

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

330m Ω @ 4.5A, 10V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 370μA

Vgs (Max) :

±20V