IPB60R330P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

330m Ω @ 4.5A, 10V

Max Dual Supply Voltage :

600V

Published :

2008

Terminal Form :

Gull wing

Pbfree Code :

yes

Power Dissipation-Max :

93W Tc

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

247 mJ

Number of Terminations :

2

Case Connection :

DRAIN

JEDEC-95 Code :

TO-236AB

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Continuous Drain Current (ID) :

12A

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 100V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™ P6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

33A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.33Ohm

Vgs(th) (Max) @ Id :

4.5V @ 370μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Terminal Position :

Single

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V