IPB60R299CPATMA1

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Mfr.Part #
IPB60R299CPATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 11A TO263-3
Stock
9,360
In Stock :
9,360

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Series :
CoolMOS™
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
299m Ω @ 6.6A, 10V
Published :
2007
Rise Time :
5ns
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Radiation Hardening :
No
Power Dissipation :
96W
Current - Continuous Drain (Id) @ 25°C :
11A Tc
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
11A
Pin Count :
4
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
40 ns
Vgs (Max) :
±20V
Turn On Delay Time :
10 ns
RoHS Status :
RoHS Compliant
Halogen Free :
Halogen Free
Max Dual Supply Voltage :
600V
Lead Free :
Contains Lead
Power Dissipation-Max :
96W Tc
Pbfree Code :
No
FET Type :
N-Channel
Factory Lead Time :
13 Weeks
Vgs(th) (Max) @ Id :
3.5V @ 440µA
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 100V
ECCN Code :
EAR99
Datasheets
IPB60R299CPATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R299CPATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, IPB60R299CPATMA1 pinout, IPB60R299CPATMA1 datasheet PDF, IPB60R299CPATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R299CPATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB60R299CPATMA1


N-Channel Tape & Reel (TR) 299m Ω @ 6.6A, 10V ±20V 1100pF @ 100V 29nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB60R299CPATMA1 Overview


A device's maximum input capacitance is 1100pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 600V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

IPB60R299CPATMA1 Features


a continuous drain current (ID) of 11A
the turn-off delay time is 40 ns


IPB60R299CPATMA1 Applications


There are a lot of Infineon Technologies
IPB60R299CPATMA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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