IPB60R299CPAATMA1

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Mfr.Part #
IPB60R299CPAATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 11A TO263-3
Stock
25
In Stock :
25

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Series :
Automotive, AEC-Q101, CoolMOS™
JESD-609 Code :
e3
Number of Elements :
1
Turn-Off Delay Time :
40 ns
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
3.5V @ 440µA
Lead Free :
Contains Lead
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
Gull wing
Current - Continuous Drain (Id) @ 25°C :
11A Tc
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
34A
Transistor Element Material :
SILICON
Number of Terminations :
2
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
299m Ω @ 6.6A, 10V
Terminal Finish :
Tin (Sn)
Power Dissipation-Max :
96W Tc
Element Configuration :
Single
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-40°C~150°C TJ
Turn On Delay Time :
10 ns
Max Dual Supply Voltage :
600V
Avalanche Energy Rating (Eas) :
290 mJ
Pbfree Code :
No
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 100V
Factory Lead Time :
18 Weeks
Pin Count :
4
Continuous Drain Current (ID) :
11A
Rise Time :
5ns
Drain to Source Breakdown Voltage :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Published :
2009
Qualification Status :
Not Qualified
Halogen Free :
Halogen Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.299Ohm
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
not_compliant
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Power Dissipation :
96W
Case Connection :
DRAIN
Datasheets
IPB60R299CPAATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R299CPAATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-40°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, IPB60R299CPAATMA1 pinout, IPB60R299CPAATMA1 datasheet PDF, IPB60R299CPAATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPB60R299CPAATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPB60R299CPAATMA1


N-Channel Tape & Reel (TR) 299m Ω @ 6.6A, 10V ±20V 1100pF @ 100V 29nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB60R299CPAATMA1 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 290 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1100pF @ 100V.This device has a continuous drain current (ID) of [11A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 40 ns.A maximum pulsed drain current of 34A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.Its overall power consumption can be reduced by using drive voltage (10V).

IPB60R299CPAATMA1 Features


the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 34A.


IPB60R299CPAATMA1 Applications


There are a lot of Infineon Technologies
IPB60R299CPAATMA1 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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