IPB60R280P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Series :

CoolMOS™ P7

Factory Lead Time :

18 Weeks

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Power Dissipation-Max :

53W Tc

Vgs(th) (Max) @ Id :

4V @ 190μA

DS Breakdown Voltage-Min :

600V

Number of Terminations :

2

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.28Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

761pF @ 400V

Avalanche Energy Rating (Eas) :

38 mJ

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pulsed Drain Current-Max (IDM) :

36A

Rds On (Max) @ Id, Vgs :

280m Ω @ 3.8A, 10V

Surface Mount :

yes

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Published :

2014