IPB60R280P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

280m Ω @ 5.2A, 10V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Halogen Free :

Halogen Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

4.5V @ 430μA

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Number of Terminations :

2

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

285 mJ

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

25.5nC @ 10V

Power Dissipation-Max :

104W Tc

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

39A

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

13.8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 100V

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.28Ohm

Terminal Finish :

Tin (Sn)

Series :

CoolMOS™ P6

Vgs (Max) :

±20V

Published :

2008

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

600V

FET Type :

N-Channel

Case Connection :

DRAIN