IPB60R280C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Continuous Drain Current (ID) :

13.8A

ECCN Code :

EAR99

Number of Elements :

1

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

11ns

Terminal Form :

Gull wing

Lead Free :

Contains Lead

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Pulsed Drain Current-Max (IDM) :

40A

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

100 ns

Max Dual Supply Voltage :

600V

Mounting Type :

Surface Mount

Halogen Free :

Halogen Free

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

104W Tc

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

No

Avalanche Energy Rating (Eas) :

284 mJ

Number of Pins :

3

Qualification Status :

Not Qualified

Power Dissipation :

104W

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Drain-source On Resistance-Max :

0.28Ohm

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 430μA

Mount :

Surface Mount

Turn On Delay Time :

13 ns