IPB60R230P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

16.8A

JESD-609 Code :

e3

Number of Terminations :

2

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

126W Tc

Terminal Position :

Single

Drain-source On Resistance-Max :

0.23Ohm

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 530μA

Avalanche Energy Rating (Eas) :

352 mJ

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

230m Ω @ 6.4A, 10V

Current - Continuous Drain (Id) @ 25°C :

16.8A Tc

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™ P6

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

600V

Published :

2008

RoHS Status :

RoHS Compliant

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

48A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1450pF @ 100V