IPB60R199CPATMA1
- Mfr.Part #
- IPB60R199CPATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 16A TO263-3
- Stock
- 14,747
- In Stock :
- 14,747
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Max Dual Supply Voltage :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 16A
- Number of Elements :
- 1
- Power Dissipation-Max :
- 139W Tc
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1520pF @ 100V
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 50 ns
- Series :
- CoolMOS™
- Turn On Delay Time :
- 10 ns
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- No
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 660µA
- Lead Free :
- Contains Lead
- Rise Time :
- 5ns
- Reach Compliance Code :
- not_compliant
- Power Dissipation :
- 139W
- Published :
- 2006
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 650V
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 199m Ω @ 9.9A, 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Pin Count :
- 4
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IPB60R199CPATMA1

N-Channel Tape & Reel (TR) 199m Ω @ 9.9A, 10V ±20V 1520pF @ 100V 43nC @ 10V 650V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB60R199CPATMA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1520pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 600V, it supports dual voltages up to the maximum.For this transistor to work, a voltage 650V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPB60R199CPATMA1 Features
a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
a 650V drain to source voltage (Vdss)
IPB60R199CPATMA1 Applications
There are a lot of Infineon Technologies
IPB60R199CPATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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