IPB60R199CPAATMA1
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- Mfr.Part #
- IPB60R199CPAATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 16A D2PAK
- Stock
- 17,064
- In Stock ：
- 17,064
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Halogen Free :
- Halogen Free
- Power Dissipation :
- 139W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1520pF @ 100V
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 10 ns
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.1mA
- Pin Count :
- 4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- not_compliant
- Rise Time :
- 5ns
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101, CoolMOS™
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 139W Tc
- Transistor Application :
- SWITCHING
- Lead Free :
- Contains Lead
- Max Dual Supply Voltage :
- 600V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 199m Ω @ 9.9A, 10V
- Turn-Off Delay Time :
- 50 ns
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 16A
- Factory Lead Time :
- 8 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 436 mJ
- Published :
- 2009
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -40°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Datasheets
- IPB60R199CPAATMA1
N-Channel Tape & Reel (TR) 199m Ω @ 9.9A, 10V ±20V 1520pF @ 100V 43nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB60R199CPAATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 436 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1520pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 600V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPB60R199CPAATMA1 Features
the avalanche energy rating (Eas) is 436 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
IPB60R199CPAATMA1 Applications
There are a lot of Infineon Technologies
IPB60R199CPAATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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