IPB60R190P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Rds On (Max) @ Id, Vgs :

190m Ω @ 7.6A, 10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Dual Supply Voltage :

600V

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Number of Terminations :

2

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

12 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

419 mJ

Transistor Element Material :

SILICON

Published :

2008

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

151W Tc

Packaging :

Cut Tape (CT)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Number of Elements :

1

FET Type :

N-Channel

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Continuous Drain Current (ID) :

20.2A

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Series :

CoolMOS™ P6

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

57A

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 630μA

Drain-source On Resistance-Max :

0.19Ohm