IPB60R190C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

600V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

418 mJ

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 630μA

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.19Ohm

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

20.2A

Pbfree Code :

No

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

151W Tc

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

190m Ω @ 9.5A, 10V

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

59A

Number of Terminations :

2

Published :

2008

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Surface Mount :

yes

Series :

CoolMOS™

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

JESD-30 Code :

R-PSSO-G2