IPB60R180P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

72W Tc

DS Breakdown Voltage-Min :

600V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

53A

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Case Connection :

DRAIN

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn)

Published :

2014

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

18 Weeks

Drain-source On Resistance-Max :

0.18ohm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

56 mJ

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1081pF @ 400V

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Series :

CoolMOS™ P7

Rds On (Max) @ Id, Vgs :

180m Ω @ 5.6A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 280μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount