IPB60R180C7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

45A

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

130m Ω @ 5.3A, 10V

Factory Lead Time :

18 Weeks

Drain-source On Resistance-Max :

0.18ohm

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

650V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

13A

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 400V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 260μA

JEDEC-95 Code :

TO-263AB

Vgs (Max) :

±20V

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Power Dissipation-Max :

68W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Number of Terminations :

2

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

53 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Series :

CoolMOS™ C7

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V